| PART |
Description |
Maker |
| CY7C266-20JC CY7C266-20WC CY7C266-45PC CY7C266 CY7 |
Memory : PROMs
8Kx8 Power-Switched and Reprogrammable PROM
|
CYPRESS[Cypress Semiconductor]
Cypress Semiconductor Corp.
|
| XCF01SV XCF01SVG XCF01SVO20C XCF01SVO48 XCF01SVOG2 |
Platform Flash In-System Programmable Configuration PROMS 平台Flash在系统可编程配置方案管理系统
Platform Flash In-System Programmable Configuration PROMS 8M X 1 CONFIGURATION MEMORY, PDSO48
|
Xilinx, Inc.
PROM
XILINX INC
|
| DM2816A |
Timer E2 16K Electrically Erasable PROMs
|
Seeq Technology
|
| 5962-9471701MPA |
QPRO Family of XC1700D QML Configuration PROMs
|
Xilinx, Inc
|
| XCF01S07 |
Platform Flash In-System Programmable Configuration PROMs
|
Xilinx, Inc
|
| XCF01SF48 XCF01SFG48 XCF01SV XCF01SVG XCF02SVO20C |
Platform Flash In-System Programmable Configuration PROMS
|
XILINX[Xilinx, Inc]
|
| XC17S30 |
Spartan Family of One-Time Programmable Configuration PROMs(Spartan系列一次可编程配置PROM) Spartan系列一次性可编程配置PROM的（斯巴达系列一次可编程配置可编程）
|
Xilinx, Inc.
|
| E28F256J3C-110 GE28F256J3C-110 E28F256J3C-115 GE28 |
Intel StrataFlash Memory (J3) 英特StrataFlash存储器（J3
Aluminum Electrolytic Radial Lead Audio Grade Capacitor; Capacitance: 2200uF; Voltage: 10V; Case Size: 10x20 mm; Packaging: Bulk 英特尔StrataFlash存储器（J3
Intel StrataFlash Memory (J3) 16M X 16 FLASH 2.7V PROM, 125 ns, PDSO56
Intel StrataFlash Memory (J3) 英特尔StrataFlash存储器（J3
Intel StrataFlash Memory (J3) 8M X 16 FLASH 3V PROM, 150 ns, PDSO56
Intel StrataFlash Memory (J3) 8M X 16 FLASH 2.7V PROM, 120 ns, PBGA64
(TE28FxxxJ3C) Strata Flash Memory
Strata Flash Memory / 256 Mbit
|
Intel, Corp.
Intel Corp.
http://
Intel Corporation
|
| 17S150AVI 17S100AVQC 17S150AVQI 17S150APC 17S100AV |
Spartan-II/Spartan-IIE Family OTP Configuration PROMs Spartan-II/Spartan-IIE家庭检察官办公室配置PROM
|
Xilinx, Inc.
|
| UN222X UNR2222 UNR2223 UNR2224 UNR2221 |
Silicon NPN epitaxial planar type
Flash Memory IC; Leaded Process Compatible:Yes; Memory Configuration:128K x 8; Memory Size:1Mbit; Package/Case:32-PLCC; Supply Voltage Max:5.5V
Flash Memory IC; Access Time, Tacc:120ns; Package/Case:32-TSOP; Memory Configuration:128K x 8; Memory Size:1Mbit; Supply Voltage Max:5.5V; Mounting
Flash Memory IC; Access Time, Tacc:45ns; Package/Case:32-TSOP; Memory Configuration:128K x 8; Memory Size:1Mbit; Supply Voltage Max:5.5V; Mounting
POT THUMBWHEEL 10K OHM LINEAR
|
Panasonic Semiconductor
Panasonic Corporation
|
| M36W832TE70ZA1T M36W832TE85ZA1T M36W832TE-ZAT M36W |
SPECIALTY MEMORY CIRCUIT, PBGA66
32 Mbit 2Mb x16, Boot Block Flash Memory and 8 Mbit 512Kb x16 SRAM, Multiple Memory Product
|
SGS Thomson Microelectronics
NUMONYX
意法半导
ST Microelectronics
|
